Programmable Metallization Cell memory (PMCm) represents a radical departure from all existing memory technologies, including those currently in development. PMCm utilizes solid state electrochemistry to attain large non-volatile resistance changes in a simple, highly scalable structure at hitherto unattainable levels of voltage and energy. PMCm is a solution to the memory scaling quandary which can be developed to meet all memory requirements of the 2014 node in the International Technology Roadmap for Semiconductors (ITRS) and beyond.